Reliability of InGaP emitter HBTs at high collector voltage

被引：0

作者：

Yeats, B ^{[1
]}

Bonse, M ^{[1
]}

Chandler, P ^{[1
]}

Culver, M ^{[1
]}

D'Avanzo, D ^{[1
]}

Essilfie, G ^{[1
]}

Hutchinson, C ^{[1
]}

Kuhn, D ^{[1
]}

Low, T ^{[1
]}

Shirley, T ^{[1
]}

机构：

[1] Agilent Technol, Santa Rosa, CA 95403 USA

来源：

GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002 | 2002年

关键词：

InGaP; HBT; reliability; breakdown; lifetest; HTOL; BVceo; BVcbo;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show analytically how bipolar transistor breakdown voltage varies between B Vceo and B Vcbo, depending on the ratio of total emitter and base resistances (Ree/Rbb). We present lifetest results for InGaP emitter HBTs biased above Vce = BVceo while using Ree/Rbb = 1. We obtained MTTF similar to1400 h at T(j,peak) approximate to 330degreesC for both standard epi and a high breakdown voltage power epi. Failures are characterized by sudden P drift at Vce B Vceo, while at higher Vce, gradual 8 draft also becomes important. We believe this is the first published lifetest study of GaAs-based HBTs stressed at high Vce. Our results further demonstrate the excellent reliability that can be achieved with InGaP-emitter HBTs.

引用

页码：73 / 76

页数：4

共 50 条

[1] Reliability results of HBTs with an InGaP emitter
Whitman, Charles S.
MICROELECTRONICS RELIABILITY, 2006, 46 (08) : 1261 - 1271
[2] Reliability of commercial InGaP/GaAs HBTs under high voltage operation
Feng, K
Yang, YF
Nguyen, C
GAAS IC SYMPOSIUM - 25TH ANNUAL TECHNICAL DIGEST 2003, 2003, : 71 - 73
[3] High linearity InGaP/GaAs power HBTs by collector design
Wang, CM
Hsu, HT
Shu, HC
Hsin, YM
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) : 58 - 60
[4] Reliability results of HBTs with an InGaP emitter (vol 46, pg 1261, 2006)
Whitman, Charles S.
MICROELECTRONICS RELIABILITY, 2006, 46 (12) : 2159 - 2159
[5] High performance InGaP/GaAs HBTs with AlGaAs/InGaP emitter passivated ledges for reliable power applications
Chen, WL
Kim, TS
Chau, HF
Henderson, T
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 361 - 364
[6] A NEW EMITTER DESIGN OF INGAP/GAAS HBTS FOR HIGH-FREQUENCY APPLICATIONS
HU, J
ZHANG, QM
SURRIDGE, RK
XU, JM
PAVLIDIS, D
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (12) : 563 - 565
[7] High-speed composite-collector InGaP/InGaAs/GaAs HBTs
Hagley, A
Surridge, RK
COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 303 - 308
[8] Current status of reliability of InGaP/GaAs HBTs
Ueda, O
Kawano, A
Takahashi, T
Tomioka, T
Fujii, T
Sasa, S
SOLID-STATE ELECTRONICS, 1997, 41 (10) : 1605 - 1610
[9] Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor
Lew, KL
Yoon, SF
JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) : 4617 - 4622
[10] A Comparative Study of InGaP/GaAs Collector-Up HBTs for High-Reliability Small-Scale PA Applications
Su, Jer-Lin
Tseng, Hsien-Cheng
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2017, 17 (04) : 678 - 682

← 1 2 3 4 5 →