Reliability of InGaP emitter HBTs at high collector voltage

被引：0

作者：

Yeats, B ^{[1
]}

Bonse, M ^{[1
]}

Chandler, P ^{[1
]}

Culver, M ^{[1
]}

D'Avanzo, D ^{[1
]}

Essilfie, G ^{[1
]}

Hutchinson, C ^{[1
]}

Kuhn, D ^{[1
]}

Low, T ^{[1
]}

Shirley, T ^{[1
]}

机构：

[1] Agilent Technol, Santa Rosa, CA 95403 USA

来源：

GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002 | 2002年

关键词：

InGaP; HBT; reliability; breakdown; lifetest; HTOL; BVceo; BVcbo;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show analytically how bipolar transistor breakdown voltage varies between B Vceo and B Vcbo, depending on the ratio of total emitter and base resistances (Ree/Rbb). We present lifetest results for InGaP emitter HBTs biased above Vce = BVceo while using Ree/Rbb = 1. We obtained MTTF similar to1400 h at T(j,peak) approximate to 330degreesC for both standard epi and a high breakdown voltage power epi. Failures are characterized by sudden P drift at Vce B Vceo, while at higher Vce, gradual 8 draft also becomes important. We believe this is the first published lifetest study of GaAs-based HBTs stressed at high Vce. Our results further demonstrate the excellent reliability that can be achieved with InGaP-emitter HBTs.

引用

页码：73 / 76

页数：4

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