Thermo-mechanical Reliability of Copper-filled and Polymer-filled Through Silicon Vias in 3D Interconnects

被引:0
|
作者
Gao, Xiang [1 ,2 ]
Chen, Run [1 ,2 ]
Wang, Xuefang [1 ,2 ]
Luo, Xiaobing [2 ,3 ]
Liu, Sheng [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Inst Microsyst, State Key Lab Digital Mfg Equipment & Technol, Sch Mech Sci & Engn, Wuhan 430074, Peoples R China
[2] Wuhan Natl Lab Optoelect, Div MOEMS, Wuhan 430074, Peoples R China
[3] Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Peoples R China
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to its many advantages over traditional 3D packaging technology, through silicon via (TSVs) is being widely used. However, there are still a variety of obstacles hindering it from being developed rapidly. One of them is the huge thermal stress induced by big CTE mismatch between silicon and copper, which would even induce interfacial delamination. In this paper, thermal stress is evaluated first through FEA analysis and severe stress concentration (about 300MPa) is found at the corner of copper attached to SiO2 dielectric layer when TSV is under serious temperature drop. Then a polymer-filled TSV is introduced, in which the thin SiO2 dielectric layer is replaced by a thick polymer isolation layer, conformal copper plating is used to realize the connection and the remaining hole in the copper via is filled with polymer material, and the analytical results reveal that thermal stress can be greatly reduced. What's more, driving forces of both cracks in polymer-filled and copper-filled TSV are calculated under negative thermal loads to investigate whether and how a crack propagates if it is initiated at interface between silicon and copper. Only negative thermal loads are considered because it is found that strain energy release rate of a crack in polymer-filled TSV is much lower, but for the entire propagation process, phase angle is bigger than that of copper-filled one especially when the crack is short, showing that delamination in polymer-filled TSV is relatively tougher to initiate and propagate. Therefore, polymer-filled TSV has a higher thermo-mechanical reliability than the traditional TSV with wholly copper filled one. Furthermore, the effects of some factors, like polymer diameter, aspect ratio and copper diameter, on delamination are analyzed. It indicates that strain energy release rate increases greatly with increase of copper diameter and aspect ratio, but decreases when diameter of filled polymer increases.
引用
收藏
页码:2132 / 2137
页数:6
相关论文
共 50 条
  • [31] 3D-interconnect: Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using X-ray microscopy
    Kong, LayWai
    Rudack, Andrew C.
    Krueger, Peter
    Zschech, Ehrenfried
    Arkalgud, Sitaram
    Diebold, A. C.
    MICROELECTRONIC ENGINEERING, 2012, 92 : 24 - 28
  • [32] Protrusion of electroplated copper filled in through silicon vias during annealing process
    Chen, Si
    Qin, Fei
    An, Tong
    Chen, Pei
    Xie, Bin
    Shi, Xunqing
    MICROELECTRONICS RELIABILITY, 2016, 63 : 183 - 193
  • [33] A study of thermo-mechanical stress and its impact on through-silicon vias
    Ranganathan, N.
    Prasad, K.
    Balasubramanian, N.
    Pey, K. L.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2008, 18 (07)
  • [34] Characterization of Thermo-Mechanical Stress and Reliability Issues for Cu-Filled TSVs
    Malta, Dean
    Gregory, Christopher
    Lueck, Matthew
    Temple, Dorota
    Krause, Michael
    Altmann, Frank
    Petzold, Matthias
    Weatherspoon, Michael
    Miller, Joshua
    2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 1815 - 1821
  • [35] Characterization of thermo-mechanical stress and reliability issues for Cu-filled TSVs
    RTI International, Research Triangle Park, NC, United States
    不详
    不详
    Proc Electron Compon Technol Conf, 2011, (1815-1821):
  • [36] Thermo-Mechanical Properties of Isotropic Conductive Adhesive Filled with Metallized Polymer Spheres
    Gakkestad, Jakob
    Li, Zhuo
    Helland, Tore
    Wong, C. P.
    PROCEEDINGS OF THE 2013 IEEE 15TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC 2013), 2013, : 213 - 218
  • [37] Thermal Stress Reliability of Copper Through Silicon Via Interconnects for 3D Logic Devices
    Kitada, Hideki
    Tashiro, Hiroko
    Miyahara, Shoichi
    Dote, Aki
    Tadaki, Shinji
    Sakuyama, Seiki
    PROCEEDINGS OF THE 2016 IEEE 18TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2016, : 115 - 119
  • [38] Thermo-mechanical reliability of 3D-integrated microstructures in stacked silicon
    Wunderle, Bernhard
    Mrossko, R.
    Wittler, O.
    Kaulfersch, E.
    Ramm, P.
    Michel, B.
    Reichl, H.
    ENABLING TECHNOLOGIES FOR 3-D INTEGRATION, 2007, 970 : 67 - +
  • [39] Integrated Process for Defect-Free Copper Plating and Chemical-Mechanical Polishing of Through-Silicon Vias for 3D Interconnects
    Malta, Dean
    Gregory, Christopher
    Temple, Dorota
    Knutson, Trevor
    Wang, Chen
    Richardson, Thomas
    Zhang, Yun
    Rhoades, Robert
    2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2010, : 1769 - 1775
  • [40] Thermal Mismatch Induced Reliability Issues for Cu Filled Through-Silicon Vias
    De Messemaeker, Joke
    Croes, Kristof
    Vandevelde, Bart
    Velenis, Dimitrios
    Redolfi, Augusto
    Jourdain, Anne
    Beyer, Gerald
    Swinnen, Bart
    Beyne, Eric
    De Wolf, Ingrid
    2012 4TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC), 2012,