40 Gbit/s silicon modulators fabricated on 200 mm and 300 mm SOI wafers.

被引：0

作者：

Marris-Morini, Delphine ^{[1
]}

Baudot, Charles ^{[2
]}

Fedeli, Jean-Marc ^{[3
]}

Rasigade, Gilles ^{[1
]}

Vulliet, Nathalie ^{[2
]}

Souhaite, Aurelie ^{[2
,3
]}

Ziebell, Melissa ^{[1
]}

Rivalin, Pierette ^{[1
]}

Olivier, Segolene ^{[3
]}

Crozat, Paul ^{[1
]}

Bouville, David ^{[1
]}

Menezo, Sylvie ^{[2
]}

Boeuf, Frederic ^{[1
]}

Vivien, Laurent ^{[3
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France

[2] STMicroelect, F-38926 Crolles, France

[3] CEA Grenoble, LETI, F-38054 Grenoble, France

来源：

SILICON PHOTONICS IX | 2014年 / 8990卷

关键词：

silicon photonics; modulation; carrier depletion; Mach Zehnder; ring resonator;

D O I：

10.1117/12.2039288

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present 40 Gbit/s optical modulators based on different types of phase shifters (lateral pn, pipin, and interleaved pn junction phase). Those structures were processed both on 200 and 300mm SOI wafers, available in large-scale microelectronic foundries. Both Ring Resonators (RR) and Mach Zehnder (MZ) modulators were fabricated. As an example, MZ modulator based on 0.95 mm long interleaved pn junction phase shifter delivered a high ER of 7.8 dB at 40 Gbit/s with low optical loss of only 4 dB. Ring modulator was also fabricated and characterized at high-speed, exhibiting 40 Gbit/s.

引用

页数：6

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