40 Gbit/s silicon modulators fabricated on 200 mm and 300 mm SOI wafers.

被引：0

作者：

Marris-Morini, Delphine ^{[1
]}

Baudot, Charles ^{[2
]}

Fedeli, Jean-Marc ^{[3
]}

Rasigade, Gilles ^{[1
]}

Vulliet, Nathalie ^{[2
]}

Souhaite, Aurelie ^{[2
,3
]}

Ziebell, Melissa ^{[1
]}

Rivalin, Pierette ^{[1
]}

Olivier, Segolene ^{[3
]}

Crozat, Paul ^{[1
]}

Bouville, David ^{[1
]}

Menezo, Sylvie ^{[2
]}

Boeuf, Frederic ^{[1
]}

Vivien, Laurent ^{[3
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France

[2] STMicroelect, F-38926 Crolles, France

[3] CEA Grenoble, LETI, F-38054 Grenoble, France

来源：

SILICON PHOTONICS IX | 2014年 / 8990卷

关键词：

silicon photonics; modulation; carrier depletion; Mach Zehnder; ring resonator;

D O I：

10.1117/12.2039288

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present 40 Gbit/s optical modulators based on different types of phase shifters (lateral pn, pipin, and interleaved pn junction phase). Those structures were processed both on 200 and 300mm SOI wafers, available in large-scale microelectronic foundries. Both Ring Resonators (RR) and Mach Zehnder (MZ) modulators were fabricated. As an example, MZ modulator based on 0.95 mm long interleaved pn junction phase shifter delivered a high ER of 7.8 dB at 40 Gbit/s with low optical loss of only 4 dB. Ring modulator was also fabricated and characterized at high-speed, exhibiting 40 Gbit/s.

引用

页数：6

共 50 条

[31] Slip-free processing of 300 mm silicon batch wafers
Fischer, A
Richter, H
Kürner, W
Kücher, P
JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) : 1543 - 1549
[32] Thermal processing issues for 300 mm silicon wafers: Challenges and opportunities
Huff, HR
Goodall, RK
Nilson, RH
Griffiths, SK
ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY, 1997, 1997 (03): : 135 - 181
[33] Impact of filtering on nanotopography measurement of 300mm silicon wafers
Riedel, F
Gerber, HA
Wagner, P
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (4-5) : 465 - 472
[34] Infrared monitoring system for wet cleaning on 300 MM silicon wafers
Endo, M
Yoshida, H
Maeda, Y
Niwano, M
Miyamoto, N
CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING, 2000, 99 (36): : 505 - 511
[35] Uniformity across 200 mm silicon wafers printed by nanoimprint lithography
Gourgon, C
Perret, C
Tallal, J
Lazzarino, F
Landis, S
Joubert, O
Pelzer, R
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (01) : 70 - 73
[36] Comparison of silicon epitaxial growth on the 200-and 300-mm wafers from trichlorosilane in Centura reactors
Segal, AS
Galyukov, AO
Kondratyev, AV
Sid'ko, AP
Karpov, SY
Makarov, YN
Siebert, W
Storck, P
MICROELECTRONIC ENGINEERING, 2001, 56 (1-2) : 93 - 98
[37] SEZ's thinner, stronger 300mm wafers
不详
SOLID STATE TECHNOLOGY, 2001, 44 (02) : 54 - 54
[38] 300mm wafers: Reclaimer's role and challenges
Thomson, C
Mynster, H
SOLID STATE TECHNOLOGY, 1999, 42 (08) : 40 - +
[39] Calculation of slip length in 300 mm silicon wafers during thermal processes
Akatsuka, M
Sueoka, K
Katahama, H
Adachi, N
SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 671 - 682
[40] Calculation of slip length in 300 mm silicon wafers during thermal processes
Akatsuka, M
Sueoka, K
Katahama, H
Adachi, N
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (07) : 2683 - 2688

← 1 2 3 4 5 →