Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy

被引：6
|
作者：
Largeau, L. [2 ]
Cheng, J. [1 ]
Regreny, P. [1 ]
Patriarche, G. [2 ]
Benamrouche, A. [1 ]
Robach, Y. [1 ]
Gendry, M. [1 ]
Hollinger, G. [1 ]
Saint-Girons, G. [1 ]
机构：
[1] Univ Lyon, Ecole Cent Lyon, CNRS, INL,UMR5270, F-69134 Ecully, France
[2] Alcatel Alsthom Rech, Route Nozay, CNRS, LPN,UPR20, F-91460 Marcoussis, France
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期
关键词：
Titanium compounds - Molecular beam epitaxy - Silicon compounds - Strontium titanates - Molecular orientation - Semiconducting gallium - Crystal orientation - III-V semiconductors - Molecular beams;
D O I：
10.1063/1.3168500
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth of GaAs islands on (001)-oriented SrTiO3 (STO) substrates by molecular beam epitaxy is studied. A competition between (111)- and (001)-oriented islands takes place. It is shown that this competition is driven by the interface energy and the critical nucleation volume of the GaAs/STO system. Perspectives are proposed to control this competition in order to define reliable growth procedures for the monolithic integration of GaAs based heterostructures on crystalline STO/Si(001) templates. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3168500]
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页数：3
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