Structure and chemical states of highly eptiaxial CeO2(001) films grown on SrTiO3 substrate by laser molecular beam epitaxy

被引：5

作者：

Zhang Jun ^{[1
]}

Wei Feng ^{[1
]}

Yang Zhimin ^{[1
]}

Chen Qiuyun ^{[2
]}

Chen Jun ^{[2
]}

Wang Shuming ^{[3
]}

机构：

[1] Gen Res Inst Nonferrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China

[2] Sci & Technol Surface Phys & Chem Lab, Mianyang 621907, Peoples R China

[3] Gen Res Inst Nonferrous Met, Natl Ctr Anal & Testing Nonferrous Met & Elect Ma, Beijing 100088, Peoples R China

来源：

JOURNAL OF RARE EARTHS | 2013年 / 31卷 / 12期

基金：

中国国家自然科学基金;

关键词：

laser molecular beam epitaxy; CeO2; thin film; oxygen vacancies; rare earths; THIN-FILMS; CEO2; DEPOSITION; LAYER;

D O I：

10.1016/S1002-0721(12)60425-6

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Highly epitaxial and pure (001)-oriented CeO2 films were grown on SrTiO3(001) substrates by laser molecular beam epitaxy method without any gas ambient. Layer-by-layer epitaxial growth mode of CeO2 was confirmed by in situ reflection high-energy electron diffraction (RHEED) observations. High-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM) results indicated the STO(100)//CeO2(100), STO[100]//CeO2[110] epitaxial relationship for out-of-plane and in-plane, respectively. The formation mechanism of the epitaxial film was also discussed in the light of a theoretical model. Chemical states of the LMBE ceria films were evaluated and evidences for the existence of Ce3+ and oxygen vacancies were presented.

引用

页码：1191 / 1194

页数：4

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