Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy

被引：6

作者：

Largeau, L. ^{[2
]}

Cheng, J. ^{[1
]}

Regreny, P. ^{[1
]}

Patriarche, G. ^{[2
]}

Benamrouche, A. ^{[1
]}

Robach, Y. ^{[1
]}

Gendry, M. ^{[1
]}

Hollinger, G. ^{[1
]}

Saint-Girons, G. ^{[1
]}

机构：

[1] Univ Lyon, Ecole Cent Lyon, CNRS, INL,UMR5270, F-69134 Ecully, France

[2] Alcatel Alsthom Rech, Route Nozay, CNRS, LPN,UPR20, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

关键词：

Titanium compounds - Molecular beam epitaxy - Silicon compounds - Strontium titanates - Molecular orientation - Semiconducting gallium - Crystal orientation - III-V semiconductors - Molecular beams;

D O I：

10.1063/1.3168500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of GaAs islands on (001)-oriented SrTiO3 (STO) substrates by molecular beam epitaxy is studied. A competition between (111)- and (001)-oriented islands takes place. It is shown that this competition is driven by the interface energy and the critical nucleation volume of the GaAs/STO system. Perspectives are proposed to control this competition in order to define reliable growth procedures for the monolithic integration of GaAs based heterostructures on crystalline STO/Si(001) templates. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3168500]

引用

页数：3

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