AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding

被引：42
|
作者：
Horng, RH [1 ]
Wuu, DS
Wei, SC
Tseng, CY
Huang, MF
Chang, KH
Liu, PH
Lin, KC
机构：
[1] Da Yeh Univ, Inst Elect Engn, Chang Hwa 515, Taiwan
[2] Visual Photon Epitaxy Co, Tao Yuan 325, Taiwan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 20期
关键词：
D O I：
10.1063/1.125228
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink. (C) 1999 American Institute of Physics. [S0003-6951(99)00346-0].
引用
收藏
页码：3054 / 3056
页数：3
相关论文
共 50 条
  • [31] High-efficiency AlGaInP light-emitting diodes
    Chui, H
    Gardner, NF
    Grillot, PN
    Huang, JW
    Krames, MR
    Maranowski, SA
    ELECTROLUMINESCENCE I, 2000, 64 : 49 - 128
  • [32] Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes
    Kish, FA
    Vanderwater, DA
    DeFevere, DC
    Steigerwald, DA
    Hofler, GE
    Park, KG
    Steranka, FM
    ELECTRONICS LETTERS, 1996, 32 (02) : 132 - 134
  • [33] Efficiency droop in AlGaInP and GaInN light-emitting diodes
    Shim, Jong-In
    Han, Dong-Pyo
    Kim, Hyunsung
    Shin, Dong-Soo
    Lin, Guan-Bo
    Meyaard, David S.
    Shan, Qifeng
    Cho, Jaehee
    Schubert, E. Fred
    Shim, Hyunwook
    Sone, Cheolsoo
    APPLIED PHYSICS LETTERS, 2012, 100 (11)
  • [34] Heat flow in AlGaInP/GaAs light-emitting diodes
    Chen, N. C.
    Yang, Y. K.
    Wang, Y. N.
    Huang, Y. C.
    APPLIED PHYSICS LETTERS, 2007, 90 (18)
  • [35] High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes
    Wuu, DS
    Horng, RH
    Huang, SH
    Chung, CR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (03): : 766 - 771
  • [36] A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding
    Lin, Bo-Wen
    Wu, Nian-Jheng
    Wu, Yew Chung Sermon
    Hsu, S. C.
    JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (05): : 371 - 376
  • [37] Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodes
    Horng, RH
    Wuu, DS
    Wei, SC
    Tseng, CT
    Huang, MF
    Chang, KH
    Liu, PH
    Lin, KC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B): : 2357 - 2359
  • [38] AlGaInP-sapphire glue bonded light-emitting diodes
    Chang, SJ
    Su, YK
    Yang, T
    Chang, CS
    Chen, TP
    Huang, KH
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (10) : 1390 - 1394
  • [39] Manufacture of AlGaInP visible light-emitting diodes by MOCVD & VPE
    Zeng, QK
    Zeng, XF
    Liao, CJ
    Liu, SH
    SOLID-STATE ELECTRONICS, 1998, 42 (06) : 993 - 995
  • [40] Electron Irradiation Degradation of AlGaInP/GaAs Light-Emitting Diodes
    Brudnyi, Valentin
    Prudaev, Ilya
    Oleinik, Vladimir
    Marmaluk, Alexander
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (08):
12345