AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding

被引：42
|
作者：
Horng, RH [1 ]
Wuu, DS
Wei, SC
Tseng, CY
Huang, MF
Chang, KH
Liu, PH
Lin, KC
机构：
[1] Da Yeh Univ, Inst Elect Engn, Chang Hwa 515, Taiwan
[2] Visual Photon Epitaxy Co, Tao Yuan 325, Taiwan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 20期
关键词：
D O I：
10.1063/1.125228
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink. (C) 1999 American Institute of Physics. [S0003-6951(99)00346-0].
引用
收藏
页码：3054 / 3056
页数：3
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