Nanostructuring of single-crystal silicon carbide by femtosecond laser irradiation in a liquid

The formation of nanostructures on the surface of single-crystal silicon carbide under ablation by femtosecond laser pulses in liquid ethanol has been experimentally investigated. A 800-nm Ti:sapphire laser with a pulse duration of 210 fs was used as a radiation source. Single-scan irradiation of SiC surface leads to the formation of periodic grooves with a period of about 200 nm. Double exposure with a sample rotation by 90A degrees between the scans gives rise to a regular array of nanostructures with average lateral size of 10 to 15 nm. It is determined that the wettability of nanostructured SiC surface is improved in comparison with the initial surface. It is shown that nanostructuring of SiC surface leads to an increase in the red light transmission by a factor of more than 60.