On the anomalous generation of {001} loops during laser annealing of ion-implanted silicon

被引：2
|
作者：
Marques, Luis A. [1 ]
Aboy, Maria [1 ]
Santos, Ivan [1 ]
Lopez, Pedro [1 ]
Cristiano, Fuccio [2 ]
La Magna, Antonino [3 ]
Huet, Karim [4 ]
Tabata, Toshiyuki [4 ]
Pelaz, Lourdes [1 ]
机构：
[1] Univ Valladolid, Dept Elect & Elect, ETSI Telecomunicac, E-47011 Valladolid, Spain
[2] Univ Toulouse, CNRS, LAAS, 7 Ave Du Col Roche, F-31031 Toulouse, France
[3] CNR, IMM, VIII Str 5, I-95121 Catania, Italy
[4] SCREEN Semicond Solut Co Ltd, LASSE, 14-30 Rue Alexandre, F-92230 Gennevilliers, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2019年 / 458卷
关键词：
Si; Annealing; Atomistic simulation; Molecular dynamics; Extended defects; EXTENDED DEFECTS; COALESCENCE; NUCLEATION; GROWTH;
D O I：
10.1016/j.nimb.2018.09.030
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We combine focused experiments with molecular dynamics simulations to investigate in detail the formation of {0 0 1} loops in nanosecond laser-annealed silicon. We demonstrate that at temperatures close to the melting point, self-interstitial rich silicon is driven into dense liquid-like droplets that are highly mobile within the solid crystalline matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {0 0 1} loops through a liquid-to-solid phase transition in the nanosecond timescale.
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页码：179 / 183
页数：5
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