On the anomalous generation of {001} loops during laser annealing of ion-implanted silicon

被引：2

作者：

Marques, Luis A. ^{[1
]}

Aboy, Maria ^{[1
]}

Santos, Ivan ^{[1
]}

Lopez, Pedro ^{[1
]}

Cristiano, Fuccio ^{[2
]}

La Magna, Antonino ^{[3
]}

Huet, Karim ^{[4
]}

Tabata, Toshiyuki ^{[4
]}

Pelaz, Lourdes ^{[1
]}

机构：

[1] Univ Valladolid, Dept Elect & Elect, ETSI Telecomunicac, E-47011 Valladolid, Spain

[2] Univ Toulouse, CNRS, LAAS, 7 Ave Du Col Roche, F-31031 Toulouse, France

[3] CNR, IMM, VIII Str 5, I-95121 Catania, Italy

[4] SCREEN Semicond Solut Co Ltd, LASSE, 14-30 Rue Alexandre, F-92230 Gennevilliers, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2019年 / 458卷

关键词：

Si; Annealing; Atomistic simulation; Molecular dynamics; Extended defects; EXTENDED DEFECTS; COALESCENCE; NUCLEATION; GROWTH;

D O I：

10.1016/j.nimb.2018.09.030

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We combine focused experiments with molecular dynamics simulations to investigate in detail the formation of {0 0 1} loops in nanosecond laser-annealed silicon. We demonstrate that at temperatures close to the melting point, self-interstitial rich silicon is driven into dense liquid-like droplets that are highly mobile within the solid crystalline matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {0 0 1} loops through a liquid-to-solid phase transition in the nanosecond timescale.

引用

页码：179 / 183

页数：5

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