Field dependence of the rate of thermal emission of holes from the VGaSAs complex in gallium arsenide

被引：3
|
作者：
Bulyarskii, SV [1 ]
Grushko, NS [1 ]
Zhukov, AV [1 ]
机构：
[1] IN Ulyanov State Univ, Ulyanovsk 432700, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 01期
关键词：
D O I：
10.1134/1.1187958
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An algorithm is proposed for evaluating the field dependence of the emission rate based on the form-function of optical transition. Experiment and calculations are carried out for the VGaSAs complex in a gallium arsenide crystal. The model proposed is compared with theoretical studies based on one-coordinate approximation. It is concluded that the one-coordinate model can be used to describe the field dependence of hole emission rate from the VGaSAs center. (C) 2000 MAIK "Nauka/Interperiodica".
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页码：40 / 44
页数：5
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