STUDY ON THE FIELD DEPENDENCE OF THE THERMAL EMISSION RATE IN Yb-DOPED P TYPE SILICON BY RDLTS.

被引：0
|
作者：
Lu, Yongling [1 ]
Fu, Chunyin [1 ]
Zeng, Shurong [1 ]
机构：
[1] Beijing Univ, Dep of Physics,, Beijing, China, Beijing Univ, Dep of Physics, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1985年 / 6卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
3
引用
收藏
页码：128 / 131
相关论文
共 50 条
  • [1] FIELD-INDEPENDENCE OF THERMAL EMISSION RATE IN AU-DOPED SILICON
    BRAUN, S
    GRIMMEISS, HG
    SOLID STATE COMMUNICATIONS, 1972, 11 (10) : 1457 - +
  • [2] Thermal analysis of Yb-doped high-power fiber amplifiers with Al:P co-doped cores
    Jauregui, Cesar
    Stutzki, Fabian
    Tuennermann, A.
    Limpert, J.
    OPTICS EXPRESS, 2018, 26 (06): : 7614 - 7624
  • [3] Impact of thermal lensing on the TMI threshold powers in rod-type Yb-doped fiber amplifiers
    Mermelstein, Marc D.
    APPLIED OPTICS, 2024, 63 (13) : 3373 - 3380
  • [4] Uniaxial and biaxial strain field dependence of the thermal oxidation rate of silicon
    Noma, H
    Takahashi, H
    Fujioka, H
    Oshima, M
    Baba, Y
    Hirose, K
    Niwa, M
    Usuda, K
    Hirashita, N
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) : 5434 - 5437
  • [5] THERMAL BREAKDOWN IN HEAVILY DOPED P-TYPE SILICON
    GORDEEV, GV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 804 - 805
  • [6] A model for field emission from p-type silicon
    Huang, QA
    Qin, M
    Zhang, B
    Sin, JKO
    IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1997, : 291 - 295
  • [7] Thermal Effects in Yb-doped Double-Cladding Distributed Modal Filtering Rod-Type Fibers
    Coscelli, Enrico
    Poli, Federica
    Joergensen, Mette M.
    Laurila, Marko
    Laegsgaard, Jesper
    Alkeskjold, Thomas T.
    Leick, Lasse
    Broeng, Jes
    Cucinotta, Annamaria
    Selleri, Stefano
    2012 14TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2012), 2012,
  • [8] Dependence of hydrogen diffusion on the electric field in p-type silicon
    Huang, YL
    Wdowiak, B
    Job, R
    Ma, Y
    Fahrner, WR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (09) : G564 - G567
  • [9] Study of the thermal mode of a silicon carbide field emission cathode
    Ivanov, A. S.
    Ilyin, V. A.
    Titov, V. N.
    24TH INTERNATIONAL CONFERENCE ON VACUUM TECHNIQUE AND TECHNOLOGY, 2017, 872
  • [10] Thermal stability of p-type doped amorphous silicon suboxides
    Janssen, R
    Janotta, A
    Stutzmann, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 840 - 844
12345