Optical and Microwave Properties of Focused Ion Beam Implanted Erbium Ions in Y2SiO5 Crystals

被引:0
|
作者
Kukharchyk, Nadezhda [1 ]
Probst, Sebastian [2 ]
Pal, Shovon [1 ]
Xia, Kangwei [3 ]
Kolesov, Roman [3 ]
Ludwig, Arne [1 ]
Ustinov, Alexey V. [2 ]
Bushev, Pavel [4 ]
Wieck, Andreas D. [1 ]
机构
[1] Ruhr Univ Bochum, Angew Festkorperphys, D-44780 Bochum, Germany
[2] Karlsruhe Inst Technol, Inst Phys, D-76128 Karlsruhe, Germany
[3] Univ Stuttgart, Phys Inst 3, D-70569 Stuttgart, Germany
[4] Univ Saarland, Expt Phys, D-66123 Saarbrucken, Germany
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present focused ion beam implantation as a prospective tool for realizing a patterned rare-earth spin-ensemble in a solid-state substrate. We demonstrate a successful implantation with 20% of luminescent ion activation for Erbium ions in Y2SiO5 crystals.
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页数:2
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