MBE growth and digital etch of GaSb/InAs nanowires on Si for logic applications

The 6.1 angstrom III-V "high-mobility" semiconductor family includes materials with beneficial transport properties of both electrons and holes (InAs, GaSb), which are appealing for fast and low-power complementary metal-oxide-semiconductor applications. Yet their large lattice mismatch with Si (similar to 12%) results in three dimensional island nucleation and therefore growth defects. The solution for deposition of this high mismatch material is the growth of the entire device from a single nucleus, such as in vertical nanowires. Two types of GaSb nanowires (NWs) are demonstrated on a Si(111) substrate: vertically stacked InAs/GaSb NWs and coaxial core/shell NWs. This paper summarizes surface preparation, growth conditions, and postprocessing steps which can be used to create nanowires with small enough diameters for use as logic devices. (C) 2017 American Vacuum Society.