InAs/GaSb Vertical Nanowire TFETs on Si for Digital and Analogue Applications

被引：0
|
作者：
Memisevic, E. [1 ]
Svensson, J. [1 ]
Lind, E. [1 ]
Wernersson, L. -E. [1 ]
机构：
[1] Lund Univ, Dept Elect & Informat Technol, Lund, Sweden
来源：
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Vertical InAs/GaSb nanowire TFETs with diameters of 20 nm and 25 nm have been fabricated and characterized. The influence of diameter, gate-placement, and nanowire numbers have been studied. The best device shows a subthreshold swing of 68 mV/dec at V-DS = 0.3 V and 26 mu A/mu m at V-DS = 0.3 V and V-GS = 0.5 V. It achieves a self-gain larger than 100 with high transconductance efficiency.
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页码：154 / 155
页数：2
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