Influence of dc bias field on dielectric properties of high-k Y5V (Ba, La)(Ti, Ce)O3 ceramic

被引:6
|
作者
Lu, Da-Yong
机构
[1] Research Center for Materials Science and Engineering, Jilin Institute of Chemical Technology, Jilin
关键词
Barium lanthanum titanate cerate; Ceramics; Perovskite relaxor; Bias; Dielectrics; Tunability; BARIUM-TITANATE CERAMICS; BA0.6SR0.4TIO3; FILMS;
D O I
10.1016/j.matlet.2009.05.022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of dc bias field (E-bias) on the dielectric properties of high-k Y5V (Ba0.94La0.03)(Ti0.94Ce0.05)O-3 ceramic (BL3TC5) was investigated. With increasing E-bias from 1 to 12.5 kV/cm, dielectric permittivity and dielectric loss were suppressed, and the permittivity maximum decreased linearly. Upon field heating and field cooling, the temperature of the permittivity maximum shifted to higher temperatures; however, the dielectric heat relaxation decreased with increasing E-bias. As E-bias >= 10 kV/cm, the frequency dispersion vanishes. The model of polar nano-domains is proposed to account for dielectric behavior under dc bias field. In addition, BL3TC5 shows high turability (similar to 67%) and low loss (<0.008) at room temperature. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1722 / 1724
页数:3
相关论文
共 50 条
  • [41] DIELECTRIC PROPERTIES OF THE POLYCRYSTALLINE SOLID SOLUTION BA (TI, ZR) O3 IN THE REGION OF A PHASE TRANSITION AT HIGH PRESSURES
    POLANDOV, IN
    MYLOV, VA
    SOVIET PHYSICS-SOLID STATE, 1964, 6 (02): : 393 - 395
  • [42] Improved microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramic with Ba2+ substitution
    Yen-Nien Wang
    Ming-De Chen
    Journal of Materials Science: Materials in Electronics, 2013, 24 : 3730 - 3735
  • [43] Improved microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramic with Ba2+ substitution
    Wang, Yen-Nien
    Chen, Ming-De
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (10) : 3730 - 3735
  • [44] Electrical properties of Ge metal–oxide–semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti
    徐火希
    徐静平
    Journal of Semiconductors, 2016, 37 (06) : 81 - 84
  • [45] Enhanced electric field tunable dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films
    Song, S. N.
    Zhai, J. W.
    Gao, L. N.
    Yao, X.
    Hung, T. F.
    Xu, Z. K.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)
  • [46] Dielectric and ferroelectric properties of Ba3M3Ti5Nb5O30 (M = Sm or Y) ceramics
    Rao, PP
    Ghosh, SK
    Koshy, P
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (12) : 729 - 732
  • [47] Electrical properties of ceramic samples of (1-x)Ba(Ti1-y Zr y )O3 a™ xPbTiO3 solid solutions
    Bush, A. A.
    Kamentsev, K. E.
    Stepanov, A. V.
    Karpunin, G. A.
    Tatarintsev, K. B.
    INORGANIC MATERIALS, 2017, 53 (03) : 318 - 325
  • [48] Influence of Sr and Zr Substitution on Dielectric Properties of (Ba1-xSrx)(Ti1-xZrx)O3
    Kajtoch, C.
    Bak, W.
    Garbarz-Glos, B.
    Stanuch, K.
    Tejchman, W.
    Mroczka, K.
    Czeppe, T.
    FERROELECTRICS, 2014, 463 (01) : 130 - 136
  • [49] Dielectric and ferroelectric properties of Ba3M3Ti5Nb5O30 (M=Sm or Y) ceramics
    P. Prabhakar Rao
    S. K. Ghosh
    Peter Koshy
    Journal of Materials Science: Materials in Electronics, 2001, 12 : 729 - 732
  • [50] Tailoring Curie temperature and dielectric properties by changing the doping sites of Y ions in (Ba, Ca)(Zr, Ti)O3 ceramics
    Shang, Min
    Ren, Pengrong
    Wan, Yuhui
    Lu, Xu
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2023, 43 (06) : 2488 - 2497