The influence of dc bias field (E-bias) on the dielectric properties of high-k Y5V (Ba0.94La0.03)(Ti0.94Ce0.05)O-3 ceramic (BL3TC5) was investigated. With increasing E-bias from 1 to 12.5 kV/cm, dielectric permittivity and dielectric loss were suppressed, and the permittivity maximum decreased linearly. Upon field heating and field cooling, the temperature of the permittivity maximum shifted to higher temperatures; however, the dielectric heat relaxation decreased with increasing E-bias. As E-bias >= 10 kV/cm, the frequency dispersion vanishes. The model of polar nano-domains is proposed to account for dielectric behavior under dc bias field. In addition, BL3TC5 shows high turability (similar to 67%) and low loss (<0.008) at room temperature. (C) 2009 Elsevier B.V. All rights reserved.
机构:
Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, England
Univ Babylon, Coll Mat Engn, Ceram & Construct Mat Dept, Al Hillah, IraqUniv Manchester, Sch Mat, Manchester M13 9PL, Lancs, England
Al-Aaraji, Mohammed N.
Hall, David A.
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Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Sch Mat, Manchester M13 9PL, Lancs, England