SOI technology for the GHz era

被引：131
|
作者：
Shahidi, GG [1 ]
机构：
[1] IBM Corp, Microelect Div, E Fishkill Facil, Hopewell Jct, NY 12533 USA
来源：
IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 2002年 / 46卷 / 2-3期
关键词：
CMOS integrated circuits - Embedded systems - Microprocessor chips - Semiconductor device structures - Static random access storage;
D O I：
10.1147/rd.462.0121
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Silicon-on-insulator (SOI) CMOS offers a 20-35% performance gain over bulk CMOS. High-performance microprocessors using SOI CMOS have been commercially available since 1998. As the technology moves to the 0.13-mum generation, SOI is being used by more companies, and its application is spreading to lower-end microprocessors and SRAMs. In this paper, after giving a short history of SOI in IBM, we describe the reasons for performance improvement with SOI, and its scalability to the 0.1-mum generation and beyond. Some of the recent applications of SOI in high-end microprocessors and its upcoming uses in low-power, radio-frequency (rf) CMOS, embedded DRAM (EDRAM), and the integration of vertical SiGe bipolar devices on SOI are described. As we move to the 0.1-mum generation and beyond, SOI is expected to be the technology of choice for system-on-a-chip applications which require high-performance CMOS, low-power, embedded memory, and bipolar devices.
引用
收藏
页码：121 / 131
页数：11
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