Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

被引：81
|
作者：
Kanai, S. [1 ]
Nakatani, Y. [2 ]
Yamanouchi, M. [1 ,3 ]
Ikeda, S. [1 ,3 ]
Sato, H. [3 ]
Matsukura, F. [1 ,3 ,4 ]
Ohno, H. [1 ,3 ,4 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Univ Electrocommun, Chofu, Tokyo 1828585, Japan
[3] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[4] Tohoku Univ, WPI AIMR, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 21期
关键词：
ATOMIC LAYERS; MANIPULATION;
D O I：
10.1063/1.4880720
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone. (C) 2014 AIP Publishing LLC.
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页数：3
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