Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

被引：81

作者：

Kanai, S. ^{[1
]}

Nakatani, Y. ^{[2
]}

Yamanouchi, M. ^{[1
,3
]}

Ikeda, S. ^{[1
,3
]}

Sato, H. ^{[3
]}

Matsukura, F. ^{[1
,3
,4
]}

Ohno, H. ^{[1
,3
,4
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Univ Electrocommun, Chofu, Tokyo 1828585, Japan

[3] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, WPI AIMR, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 21期

关键词：

ATOMIC LAYERS; MANIPULATION;

D O I：

10.1063/1.4880720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone. (C) 2014 AIP Publishing LLC.

引用

页数：3

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