Spin-transfer switching in MgO magnetic tunnel junction nanostructures

被引：17
|
作者：
Huai, Yiming [1 ]
Pakala, Mahendra [1 ]
Diao, Zhitao [1 ]
Apalkov, Dmytro [1 ]
Ding, Yunfei [1 ]
Panchula, Alex [1 ]
机构：
[1] Grandis Inc, Milpitas, CA 95035 USA
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 304卷 / 01期
关键词：
spin transfer; MTJ; MRAM;
D O I：
10.1016/j.jmmm.2006.04.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magneto resistance ratio of up to 160% and the average intrinsic switching current density (J(c0)) down to 2 MA/cm(2), which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlOx MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：88 / 92
页数：5
相关论文
共 50 条
  • [1] Evaluation of spin-transfer switching in CoFeB/MgO/CoFeB magnetic tunnel junctions
    Kubota, H
    Fukushima, A
    Ootani, Y
    Yuasa, S
    Ando, K
    Maehara, H
    Tsunekawa, K
    Djayaprawira, DD
    Watanabe, N
    Suzuki, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (37-41): : L1237 - L1240
  • [2] Spin-transfer switching in MgO-based magnetic tunnel junctions (invited)
    Diao, Zhitao
    Pakala, Mahendra
    Panchula, Alex
    Ding, Yunfei
    Apalkov, Dmytro
    Wang, Lien-Chang
    Chen, Eugene
    Huai, Yiming
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [3] Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect
    Kanai, S.
    Nakatani, Y.
    Yamanouchi, M.
    Ikeda, S.
    Sato, H.
    Matsukura, F.
    Ohno, H.
    APPLIED PHYSICS LETTERS, 2014, 104 (21)
  • [4] Switching Properties for MgO-Based Magnetic Tunnel Junction Devices Driven by Spin-Transfer Torque in the Nanosecond Regime
    Lee, Jia-Mou
    Lee, Ching-Ming
    Ye, Lin-Xiu
    Su, Juhng-Perng
    Wu, Te-Ho
    IEEE TRANSACTIONS ON MAGNETICS, 2011, 47 (03) : 629 - 632
  • [5] Precessional spin-transfer switching in a magnetic tunnel junction with a synthetic antiferromagnetic perpendicular polarizer
    de Castro, M. Marins
    Sousa, R. C.
    Bandiera, S.
    Ducruet, C.
    Chavent, A.
    Auffret, S.
    Papusoi, C.
    Prejbeanu, I. L.
    Portemont, C.
    Vila, L.
    Ebels, U.
    Rodmacq, B.
    Dieny, B.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)
  • [6] Low-current-density spin-transfer switching in Gd22Fe78-MgO magnetic tunnel junction
    Kinjo, Hidekazu
    Machida, Kenji
    Matsui, Koichi
    Aoshima, Ken-ichi
    Kato, Daisuke
    Kuga, Kiyoshi
    Kikuchi, Hiroshi
    Shimidzu, Naoki
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (20)
  • [7] Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells
    Zeng, Z. M.
    Amiri, P. Khalili
    Rowlands, G.
    Zhao, H.
    Krivorotov, I. N.
    Wang, J. -P.
    Katine, J. A.
    Langer, J.
    Galatsis, K.
    Wang, K. L.
    Jiang, H. W.
    APPLIED PHYSICS LETTERS, 2011, 98 (07)
  • [8] Spin-transfer torque and specific features of magnetic-state switching in vacuum tunnel nanostructures
    G. D. Demin
    A. F. Popkov
    N. A. Dyuzhev
    Semiconductors, 2015, 49 : 1679 - 1683
  • [9] Spin-transfer torque and specific features of magnetic-state switching in vacuum tunnel nanostructures
    Demin, G. D.
    Popkov, A. F.
    Dyuzhev, N. A.
    SEMICONDUCTORS, 2015, 49 (13) : 1679 - 1683
  • [10] A macro model of spin-transfer torque magnetic tunnel junction
    陈明博
    李琨琨
    杨晓蕾
    彭雪
    李旺达
    刘恩隆
    吴惠桢
    何世坤
    Chinese Physics B, 2024, 33 (12) : 544 - 550
12345