GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress

被引：7

作者：

Caria, A. ^{[1
]}

De Santi, C. ^{[1
]}

Zamperetti, F. ^{[1
]}

Huang, X. ^{[2
]}

Fu, H. ^{[2
]}

Chen, H. ^{[2
]}

Zhao, Y. ^{[2
]}

Neviani, A. ^{[1
]}

Meneghesso, G. ^{[1
]}

Zanoni, E. ^{[1
]}

Meneghini, M. ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, I-35131 Padua, Italy

[2] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

MICROELECTRONICS RELIABILITY | 2020年 / 114卷

关键词：

INGAN;

D O I：

10.1016/j.microrel.2020.113802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the degradation of InGaN-GaN MQW solar cells under optical and electrical stress. We submitted the devices to high temperature, high optical power stress and we found that, under optical stress, the devices show a moderate decrease in open-circuit voltage, possibly due to creation of defect-related shunt paths. This degradation is partially recovered after room temperature storage. The stronger decrease of open-circuit voltage under electrical stress at high current suggests a role of carrier flow in the degradation.

引用

页数：5

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