In GaN Multiple Quantum Well Solar Cells on a Patterned Sapphire Substrate

被引：0
|
作者：
Bi, Zhen [1 ,2 ,3 ]
Zhang, Jincheng [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
[3] Xidian Univ, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China
来源：
PROCEEDINGS OF THE AASRI INTERNATIONAL CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (IEA 2015) | 2015年 / 2卷
关键词：
In GaN; multiple quantum wells; solar cells; conversion efficiency;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The performance In GaN/GaN multiple quantum wells solar cells on a patterned sapphire substrate (PSS) was investigated. Compare to the solar on a planar substrate, the In GaN/GaN multiple quantum wells (MQWs) solar cell grown on PSS exhibited a higher performance, with the conversion efficiency (eta) rising from 0.36% to 0.64%.
引用
收藏
页码：422 / 424
页数：3
相关论文
共 50 条
  • [1] Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate
    井亮
    肖红领
    王晓亮
    王翠梅
    邓庆文
    李志东
    丁杰钦
    王占国
    侯洵
    Journal of Semiconductors, 2013, (12) : 49 - 52
  • [2] Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate
    井亮
    肖红领
    王晓亮
    王翠梅
    邓庆文
    李志东
    丁杰钦
    王占国
    侯洵
    Journal of Semiconductors, 2013, 34 (12) : 49 - 52
  • [3] Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate
    Jing Liang
    Xiao Hongling
    Wang Xiaoliang
    Wang Cuimei
    Deng Qingwen
    Li Zhidong
    Ding Jieqin
    Wang Zhanguo
    Hou Xun
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (12)
  • [4] Enhanced conversion efficiency of InGaN multiple quantum well solar cells grown on a patterned sapphire substrate
    Lee, Ya-Ju
    Lee, Min-Hung
    Cheng, Chun-Mao
    Yang, Chia-Hao
    APPLIED PHYSICS LETTERS, 2011, 98 (26)
  • [5] V-defects formation and optical properties of InGaN/GaN multiple quantum well LED grown on patterned sapphire substrate
    Wang, Huanyou
    Wang, Xianchun
    Tan, Qiaolai
    Zeng, Xiaohua
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 29 : 112 - 116
  • [6] InGaN/GaN multiple quantum well concentrator solar cells
    Dahal, R.
    Li, J.
    Aryal, K.
    Lin, J. Y.
    Jiang, H. X.
    APPLIED PHYSICS LETTERS, 2010, 97 (07)
  • [7] Simulation study of InGaN/GaN multiple quantum well solar cells
    Sayad, Yassine
    Nonni, AbdelKader
    JOURNAL OF NEW TECHNOLOGY AND MATERIALS, 2014, 4 (01) : 9 - 10
  • [8] Transport modeling of InGaN/GaN multiple quantum well solar cells
    Cavassilas, Nicolas
    Michelini, Fabienne
    Bescond, Marc
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 2875 - 2877
  • [9] Temperature Dependence of InGaN / GaN Multiple Quantum Well Solar Cells
    Belghouthi, Rabeb
    Aillerie, Michel
    TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY (TMREES), 2019, 157 : 793 - 801
  • [10] Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate
    Prudaev, I. A.
    Romanov, I. S.
    Novikov, Vad. A.
    Marmalyuk, A. A.
    Kureshov, V. A.
    Sabitov, D. R.
    Mazalov, A. V.
    RUSSIAN PHYSICS JOURNAL, 2014, 57 (05) : 657 - 661
12345