Design optimizations of a high performance microprocessor using combinations of Dual-VT allocation and transistor sizing

被引:20
|
作者
Tschanz, J [1 ]
Ye, YB [1 ]
Wei, LQ [1 ]
Govindarajulu, V [1 ]
Borkar, N [1 ]
Burns, S [1 ]
Karnik, T [1 ]
Borkar, S [1 ]
De, VV [1 ]
机构
[1] Intel Labs, Hillsboro, OR USA
关键词
D O I
10.1109/VLSIC.2002.1015089
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Joint optimizations of dual-V-T allocation and transistor sizing reduce low-V-T usage by 36%-45% and leakage power by 20%, with minimal impact on total active power and die area. An enhancement of the optimum design allows processor frequency to be increased efficiently during manufacturing.
引用
收藏
页码:218 / 219
页数:2
相关论文
共 25 条
  • [1] Total power optimization by simultaneous dual-Vt allocation and device sizing in high performance microprocessors
    Karnik, T
    Ye, YB
    Tschanz, J
    Wei, LQ
    Burns, S
    Govindarajulu, V
    De, V
    Borkar, S
    39TH DESIGN AUTOMATION CONFERENCE, PROCEEDINGS 2002, 2002, : 486 - 491
  • [2] Synthesis of low power high performance dual-VT PTL circuits
    Samanta, D
    Pal, A
    17TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS: DESIGN METHODOLOGIES FOR THE GIGASCALE ERA, 2004, : 85 - 90
  • [3] Bounded Potential Slack: Enabling Time Budgeting for Dual-Vt Allocation of Hierarchical Design
    Seomun, Jun
    Paik, Seungwhun
    Shin, Youngsoo
    2010 15TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC 2010), 2010, : 571 - 576
  • [4] High-performance device optimization and dual-VT technology options for doublegate FET
    Bansal, Aditya
    Kim, Keunwoo
    Kim, Jae-Joon
    Mukhopadyay, Saibal
    Chuang, Ching-Te
    Roy, Kaushik
    2007 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2007, : 83 - +
  • [5] 60nm gate length dual-Vt CMOS for high performance applications
    Mehrotra, M
    Wu, J
    Jain, A
    Laaksonen, T
    Kim, K
    Bather, W
    Koshy, R
    Chen, J
    Jacobs, J
    Ukraintsev, V
    Olsen, L
    DeLoach, J
    Mehigan, J
    Agarwal, R
    Walsh, S
    Sekel, D
    Tsung, L
    Vaidyanathan, M
    Trentman, B
    Liu, K
    Aur, S
    Khamankar, R
    Nicollian, P
    Jiang, Q
    Xu, Y
    Campbell, B
    Tiner, P
    Wise, R
    Scott, D
    Rodder, M
    2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, : 124 - 125
  • [6] Design and Analysis of Dual Source Vertical Tunnel Field Effect Transistor for High Performance
    Badgujjar, Soniya
    Wadhwa, Girish
    Singh, Shailendra
    Raj, Balwinder
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2020, 21 (01) : 74 - 82
  • [7] Design and Analysis of Dual Source Vertical Tunnel Field Effect Transistor for High Performance
    Soniya Badgujjar
    Girish Wadhwa
    Shailendra Singh
    Balwinder Raj
    Transactions on Electrical and Electronic Materials, 2020, 21 : 74 - 82
  • [8] Dual-VT SRAM cells with full-swing single-ended bit line sensing for high-performance on-chip cache in 0.13 μm technology generation
    Hamzaoglu, F
    Ye, YB
    Keshavarzi, A
    Zhang, K
    Narendra, S
    Borkar, S
    Stan, M
    De, V
    ISLPED '00: PROCEEDINGS OF THE 2000 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN, 2000, : 15 - 19
  • [9] A High Performance DRAM Design Using U-FinFET as Access Transistor
    Wen, Meng-Qi
    Ye, Zhi-Yuan
    Li, Yue
    Su, Zheng-Yuan
    Yao, Yao
    Liu, Lei
    Wang, Peng-Fei
    2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 401 - 403
  • [10] Performance Comparison of High-Speed Dual Modulus Prescalers Using Metaheuristic Sizing/Optimization
    Navarro, Joao
    Luppe, Maximiliam
    33RD SYMPOSIUM ON INTEGRATED CIRCUITS AND SYSTEMS DESIGN (SBCCI 2020), 2020,