Multiscale-Multiphysics Modeling of Nonpolar InGaN LEDs

被引：0

作者：

Nishat, Md Rezaul Karim ^{[1
]}

Tankasala, Archana ^{[2
]}

Kharche, Neerav ^{[3
]}

Rahman, Rajib ^{[2
]}

Ahmed, Shaikh S. ^{[1
]}

机构：

[1] Southern Illinois Univ Carbondale, Dept Elect & Comp Engn, 1230 Lincoln Dr, Carbondale, IL 62901 USA

[2] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47906 USA

[3] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA

来源：

2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2017年

基金：

美国国家科学基金会;

关键词：

InGaN LED; nonpolar orientation; tight-binding; internal potential; excitonic bandgap; multiscale modeling; ATOMISTIC SIMULATION; NEMO; 3-D;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we develop and employ a multiscale-multiphysics simulator (based on coupled VFF molecular mechanics, 10-band sp(3)s*-spin tight-binding formalism, many body full configuration interaction, and a TCAD transport module) to study and compare the performance of realistically sized multiple-quantum-well wurtzite InGaN LEDs in polar (c-plane) and nonpolar (a-plane) crystallographic directions. The a-plane device exhibited smaller yet non-vanishing internal fields and higher optical transition rate as compared to the c-plane counterpart.

引用

页码：85 / 88

页数：4

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