Multiscale-Multiphysics Modeling of Nonpolar InGaN LEDs

被引：0
|
作者：
Nishat, Md Rezaul Karim [1 ]
Tankasala, Archana [2 ]
Kharche, Neerav [3 ]
Rahman, Rajib [2 ]
Ahmed, Shaikh S. [1 ]
机构：
[1] Southern Illinois Univ Carbondale, Dept Elect & Comp Engn, 1230 Lincoln Dr, Carbondale, IL 62901 USA
[2] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47906 USA
[3] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA
来源：
2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2017年
基金：
美国国家科学基金会;
关键词：
InGaN LED; nonpolar orientation; tight-binding; internal potential; excitonic bandgap; multiscale modeling; ATOMISTIC SIMULATION; NEMO; 3-D;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we develop and employ a multiscale-multiphysics simulator (based on coupled VFF molecular mechanics, 10-band sp(3)s*-spin tight-binding formalism, many body full configuration interaction, and a TCAD transport module) to study and compare the performance of realistically sized multiple-quantum-well wurtzite InGaN LEDs in polar (c-plane) and nonpolar (a-plane) crystallographic directions. The a-plane device exhibited smaller yet non-vanishing internal fields and higher optical transition rate as compared to the c-plane counterpart.
引用
收藏
页码：85 / 88
页数：4
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