Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs

被引：4
|
作者：
Sui, Y. [1 ]
Cooper, J. A. [1 ]
Wang, X. [1 ]
Walden, G. G. [1 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷
关键词：
Silicon carbide; insulated gate bipolar transistor (IGBT); high voltage; power switching devices; wide bandgap;
D O I：
10.4028/www.scientific.net/MSF.600-603.1191
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the drift layer. The maximum currents of the experimental p-channel IGBTs are 1.2x and 2.1x higher than the ideal 20 kV n-channel DMOSFETs at room temperature and 175 degrees C, respectively.
引用
收藏
页码：1191 / 1194
页数：4
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