Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs

被引：4

作者：

Sui, Y. ^{[1
]}

Cooper, J. A. ^{[1
]}

Wang, X. ^{[1
]}

Walden, G. G. ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Silicon carbide; insulated gate bipolar transistor (IGBT); high voltage; power switching devices; wide bandgap;

D O I：

10.4028/www.scientific.net/MSF.600-603.1191

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the drift layer. The maximum currents of the experimental p-channel IGBTs are 1.2x and 2.1x higher than the ideal 20 kV n-channel DMOSFETs at room temperature and 175 degrees C, respectively.

引用

页码：1191 / 1194

页数：4

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