Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs

被引：4
|
作者：
Sui, Y. [1 ]
Cooper, J. A. [1 ]
Wang, X. [1 ]
Walden, G. G. [1 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷
关键词：
Silicon carbide; insulated gate bipolar transistor (IGBT); high voltage; power switching devices; wide bandgap;
D O I：
10.4028/www.scientific.net/MSF.600-603.1191
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the drift layer. The maximum currents of the experimental p-channel IGBTs are 1.2x and 2.1x higher than the ideal 20 kV n-channel DMOSFETs at room temperature and 175 degrees C, respectively.
引用
收藏
页码：1191 / 1194
页数：4
相关论文
共 50 条
  • [1] Design and characterization of high-voltage 4H-SiC p-IGBTs
    Zhang, Qingchun
    Wang, Jun
    Jonas, Charlotte
    Callanan, Robert
    Sumakeris, Joseph J.
    Ryu, Sei-Hyung
    Das, Mrinal
    Agarwal, Anant
    Palmour, John
    Huang, Alex Q.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1912 - 1919
  • [2] High temperature SiC trench gate p-IGBTs
    Singh, R
    Ryu, SH
    Capell, DC
    Palmour, JW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) : 774 - 784
  • [3] Characterization and modeling of high-voltage field-stop IGBTs
    Kang, XS
    Caiafa, A
    Santi, E
    Hudgins, JL
    Palmer, PR
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2003, 39 (04) : 922 - 928
  • [4] Characterization and modeling of high-voltage field-stop IGBTs
    Kang, X
    Caiafa, A
    Santi, E
    Hudgins, JL
    Palmer, PR
    CONFERENCE RECORD OF THE 2002 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-4, 2002, : 2175 - 2181
  • [5] DMOSFETS, IGBTS SWITCH HIGH-VOLTAGE
    GOODENOUGH, F
    ELECTRONIC DESIGN, 1994, 42 (23) : 95 - &
  • [6] Cryogenic operation of high-voltage IGBTs
    Mueller, EK
    Mueller, OM
    Hennessy, MJ
    LOW TEMPERATURE ELECTRONICS AND LOW TEMPERATURE COFIRED CERAMIC BASED ELECTRONIC DEVICES, 2004, 2003 (27): : 73 - 84
  • [7] A simulation study of high voltage 4H-SiC IGBTs
    Wang, J
    Williams, BW
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (07) : 806 - 815
  • [8] Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs
    Chowdhury, Sauvik
    Hitchcock, Collin W.
    Stum, Zachary
    Dahal, Rajendra P.
    Bhat, Ishwara B.
    Chow, T. Paul
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 888 - 896
  • [9] Design and fabrications of high voltage IGBTs on 4H-SiC
    Zhang, Qingchun
    Jonas, Charlotte
    Ryu, Sei-Hyung
    Agarwal, Anant
    Palmour, John
    PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 285 - +
  • [10] Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs
    Tamaki, Tomohiro
    Walden, Ginger G.
    Sui, Yang
    Cooper, James A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1928 - 1933
12345