Wafer Level Statistical Evaluation of the Proton Radiation Hardness of a High-κ Dielectric/Metal Gate 45 nm Bulk CMOS Technology

被引：1

作者：

Claeys, C. ^{[1
,2
]}

Iacovo, S. ^{[1
,3
]}

Kobayashi, D. ^{[4
,5
]}

Mercha, A. ^{[1
]}

Griffoni, A. ^{[1
]}

Roussel, Ph ^{[1
]}

Crupi, F. ^{[6
]}

Simoen, E. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept EE, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven, Dept Phys Semicond, B-3001 Heverlee, Belgium

[4] ISAS, JAXA, Ayase, Kanagawa 252, Japan

[5] OSRAM, Ctr Competence Outdoor Lighting, I-31100 Treviso, Italy

[6] Univ Calabria, DEIS, I-87036 Cosenza, Italy

来源：

HIGH PURITY SILICON 12 | 2012年 / 50卷 / 05期

关键词：

D O I：

10.1149/05005.0213ecst

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Although scaled down technologies may suffer from statistical parameter fluctuations caused by process variability, they are potentially radiation hard from a total-dose perspective. Therefore, the proton radiation hardness of a high-kappa/metal gate 45 nm CMOS technology is studied using wafer level testing on 300 mm wafers. Attention is given to the correlation between pre-and post-radiation parameter variations. It is demonstrated that both the preirradiation process variability and the radiation-induced variability of the parameters have to be taken into account. For devices with a capping layer, the type of dielectric layer has an impact on the radiation-induced trapping mechanisms.

引用

页码：213 / 222

页数：10

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