Comparison of Advanced Transport Models for Nanoscale nMOSFETs

被引：1

作者：

Palestri, P. ^{[1
]}

Alexander, C. ^{[2
]}

Asenov, A. ^{[2
]}

Baccarani, G. ^{[3
]}

Bournel, A. ^{[4
]}

Braccioli, M. ^{[3
]}

Cheng, B. ^{[2
]}

Dollfus, P. ^{[4
]}

Esposito, A. ^{[5
]}

Esseni, D. ^{[1
]}

Ghetti, A. ^{[6
]}

Fiegna, C. ^{[3
]}

Fiori, G. ^{[4
]}

Aubry-Fortuna, V. ^{[4
]}

Iannaccone, G. ^{[4
]}

Martinez, A. ^{[2
]}

Majkusiak, B. ^{[7
]}

Monfray, S. ^{[8
]}

Reggiani, S. ^{[3
]}

Riddet, C. ^{[2
]}

Saint-Martin, J. ^{[4
]}

Sangiorgi, E. ^{[3
]}

Schenk, A. ^{[5
]}

Selmi, L. ^{[1
]}

Silvestri, L. ^{[3
]}

Walczak, J. ^{[7
,9
]}

机构：

[1] Univ Udine, IUNET, DIEGM, Via Sci 208, I-33100 Udine, Italy

[2] Univ Glasgow, Glasgow, Lanark, Scotland

[3] Univ Bologna, IUNET, ARCES, Bologna, Italy

[4] Univ Paris, IEF, CNRS, Orsay, France

[5] ETH, CH-8092 Zurich, Switzerland

[6] R & D Technol Dev, Numonyx, I-20041 Agrate Brianza, Italy

[7] Warsaw Univ Technol, Warsaw, Poland

[8] ST Microelect, Crolles, France

[9] Univ Pisa, IUNET, Pisa, Italy

来源：

ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON | 2009年

关键词：

MONTE-CARLO; MOBILITY MODEL; ELECTRON; MOSFETS; PERFORMANCE; SIMULATION; SOI;

D O I：

10.1109/ULIS.2009.4897554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22mn Double-Gate and 32mn FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.

引用

页码：125 / +

页数：2

共 50 条

[31] On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects
Wang, Guanyu
Zhang, Heming
Wang, Wei
Yuan, Jun
Wang, Zhen
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (02) : 439 - 448
[32] Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs
Lee, Seonhaeng
Kim, Dongwoo
Kim, Cheolgyu
Lee, N-H.
Kim, G-J
Lee, Chiho
Park, Jeongsoo
Kang, Bongkoo
MICROELECTRONICS RELIABILITY, 2012, 52 (9-10) : 1905 - 1908
[33] Comparison of the transport of the aggregates of nanoscale zerovalent iron under vertical and horizontal flow
Li, Jing
Ghoshal, Subhasis
CHEMOSPHERE, 2016, 144 : 1398 - 1407
[34] On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects
Guanyu Wang
Heming Zhang
Wei Wang
Jun Yuan
Zhen Wang
Journal of Computational Electronics, 2014, 13 : 439 - 448
[35] Advanced turbulence models for predicting particle transport in enclosed environments
Wang, Miao
Lin, Chao-Hsin
Chen, Qingyan
BUILDING AND ENVIRONMENT, 2012, 47 : 40 - 49
[36] Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD
Selmi, L.
Caruso, E.
Carapezzi, S.
Visciarelli, M.
Gnani, E.
Zagni, N.
Pavan, P.
Palestri, P.
Esseni, D.
Gnudi, A.
Reggiani, S.
Puglisi, F. M.
Verzellesi, G.
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2017,
[37] Comparison and analysis of four advanced bounding surface models
Meng, Xiaowei
Zhai, Endi
Xu, Chengshun
MARINE GEORESOURCES & GEOTECHNOLOGY, 2024, 42 (09) : 1240 - 1257
[38] ADVANCED MODELS FOR THE REWET OF SUPERHEATED DEBRIS AND COMPARISON WITH EXPERIMENTS
GORHAMBERGERON, E
BERGERON, KD
TREBILCOCK, W
TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1983, 45 : 465 - 466
[39] Numerical study of nanoscale and microscale particle transport in realistic lung models with and without stenosis
Rahman, Md. M.
Zhao, Ming
Islam, Mohammad S.
Dong, Kejun
Saha, Suvash C.
INTERNATIONAL JOURNAL OF MULTIPHASE FLOW, 2021, 145
[40] Computational Models for Nanoscale Fluid Dynamics and Transport Inspired by Nonequilibrium Thermodynamics1
Radhakrishnan, Ravi
Yu, Hsiu-Yu
Eckmann, David M.
Ayyaswamy, Portonovo S.
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2017, 139 (03):

← 1 2 3 4 5 →