Comparison of Advanced Transport Models for Nanoscale nMOSFETs

被引：1

作者：

Palestri, P. ^{[1
]}

Alexander, C. ^{[2
]}

Asenov, A. ^{[2
]}

Baccarani, G. ^{[3
]}

Bournel, A. ^{[4
]}

Braccioli, M. ^{[3
]}

Cheng, B. ^{[2
]}

Dollfus, P. ^{[4
]}

Esposito, A. ^{[5
]}

Esseni, D. ^{[1
]}

Ghetti, A. ^{[6
]}

Fiegna, C. ^{[3
]}

Fiori, G. ^{[4
]}

Aubry-Fortuna, V. ^{[4
]}

Iannaccone, G. ^{[4
]}

Martinez, A. ^{[2
]}

Majkusiak, B. ^{[7
]}

Monfray, S. ^{[8
]}

Reggiani, S. ^{[3
]}

Riddet, C. ^{[2
]}

Saint-Martin, J. ^{[4
]}

Sangiorgi, E. ^{[3
]}

Schenk, A. ^{[5
]}

Selmi, L. ^{[1
]}

Silvestri, L. ^{[3
]}

Walczak, J. ^{[7
,9
]}

机构：

[1] Univ Udine, IUNET, DIEGM, Via Sci 208, I-33100 Udine, Italy

[2] Univ Glasgow, Glasgow, Lanark, Scotland

[3] Univ Bologna, IUNET, ARCES, Bologna, Italy

[4] Univ Paris, IEF, CNRS, Orsay, France

[5] ETH, CH-8092 Zurich, Switzerland

[6] R & D Technol Dev, Numonyx, I-20041 Agrate Brianza, Italy

[7] Warsaw Univ Technol, Warsaw, Poland

[8] ST Microelect, Crolles, France

[9] Univ Pisa, IUNET, Pisa, Italy

来源：

ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON | 2009年

关键词：

MONTE-CARLO; MOBILITY MODEL; ELECTRON; MOSFETS; PERFORMANCE; SIMULATION; SOI;

D O I：

10.1109/ULIS.2009.4897554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22mn Double-Gate and 32mn FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.

引用

页码：125 / +

页数：2

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