From device aging physics to automated circuit reliability sign off

被引：2
|
作者：
Schluender, Christian [1 ]
Waschneck, Katja [2 ]
Rotter, Peter [1 ]
Lachenmann, Susanne [1 ]
Reisinger, Hans [2 ]
Ungar, Franz [1 ]
Georgakos, Georg [1 ]
机构：
[1] Infineon Technol AG, Design Enabling & Serv Dept, D-85579 Neubiberg, Germany
[2] Infineon Technol AG, Reliabil & Qualificat Dept, D-85579 Neubiberg, Germany
来源：
2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2019年
关键词：
HOT-CARRIER DEGRADATION; P-MOSFETS; ANALOG;
D O I：
10.1109/irps.2019.8720457
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：12
相关论文
共 50 条
  • [41] The defect-centric perspective of device and circuit reliability-From gate oxide defects to circuits
    Kaczer, B.
    Franco, J.
    Weckx, P.
    Roussel, Ph. J.
    Simicic, M.
    Putcha, V.
    Bury, E.
    Cho, M.
    Degraeve, R.
    Linten, D.
    Groeseneken, G.
    Debacker, P.
    Parvais, B.
    Raghavan, P.
    Catthoor, F.
    Rzepa, G.
    Waltl, M.
    Goes, W.
    Grasser, T.
    SOLID-STATE ELECTRONICS, 2016, 125 : 52 - 62
  • [42] The Function of IR thermal imaging technology for device and circuit reliability research
    Song, Fang Fang
    He, Xiaoqi
    En, Yunfei
    2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
  • [43] Towards Reliability-Aware Circuit Design in Nanoscale FinFET Technology - New-Generation Aging Model and Circuit Reliability Simulator
    Guo, Shaofeng
    Wang, Runsheng
    Yu, Zhuoqing
    Hao, Peng
    Ren, Pengpeng
    Wang, Yangyuan
    Liao, Siyu
    Huang, Chunyi
    Guo, Tianlei
    Chen, Alvin
    Xie, Jushan
    Huang, Ru
    2017 IEEE/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD), 2017, : 780 - 785
  • [44] Impact of Interface Traps on Negative Capacitance Transistor: Device and Circuit Reliability
    Prakash, Om
    Gupta, Aniket
    Pahwa, Girish
    Henkel, Jorg
    Chauhan, Yogesh S.
    Amrouch, Hussam
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 : 1193 - 1201
  • [45] Efficient Variability- and Reliability-aware Device-Circuit Co-Design: From Trap Behaviors to Circuit Performance
    Chen, Wangyong
    Cai, Linlin
    Du, Gang
    Liu, Xiaoyan
    2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2019,
  • [46] A new device reliability evaluation method for overdrive voltage circuit application
    Cheng, Tao
    Lee, M. Z.
    Yang, M. T.
    2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 715 - 716
  • [47] AUTOMATED ANALYTICAL SYSTEMS AND DATATERMINALS - OFF-LINE DATASYSTEM DEVICE
    CHRISTIANSEN, H
    GRIMNES, S
    KULAS, FR
    WAALER, T
    PHARMACEUTICA ACTA HELVETIAE, 1971, 46 (10-1): : 677 - +
  • [48] Carbon nanotube field effect transistors - Fabrication, device physics, and circuit implications
    Wong, HSP
    Appenzeller, J
    Derycke, V
    Martel, R
    Wind, S
    Avouris, P
    2003 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE: DIGEST OF TECHNICAL PAPERS, 2003, 46 : 370 - +
  • [49] Simulation of ARCP converter with physics-based circuit simulator device models
    Kang, X
    Caiafa, A
    Santi, E
    Hudgins, JL
    Palmer, PR
    PESC'03: 2003 IEEE 34TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-4, CONFERENCE PROCEEDINGS, 2003, : 1904 - 1909
  • [50] Investigation of DRAM PUFs Reliability under Device Accelerated Aging Effects
    Tehranipoor, Fatemeh
    Karimian, Nima
    Yan, Wei
    Chandy, John A.
    2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2017,
12345