From device aging physics to automated circuit reliability sign off

被引：2
|
作者：
Schluender, Christian [1 ]
Waschneck, Katja [2 ]
Rotter, Peter [1 ]
Lachenmann, Susanne [1 ]
Reisinger, Hans [2 ]
Ungar, Franz [1 ]
Georgakos, Georg [1 ]
机构：
[1] Infineon Technol AG, Design Enabling & Serv Dept, D-85579 Neubiberg, Germany
[2] Infineon Technol AG, Reliabil & Qualificat Dept, D-85579 Neubiberg, Germany
来源：
2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2019年
关键词：
HOT-CARRIER DEGRADATION; P-MOSFETS; ANALOG;
D O I：
10.1109/irps.2019.8720457
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：12
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