Transport processes fn the thermal decomposition of silicon carbide

被引：0
|
作者：
Motzfeldt, K
Steinmo, M
机构：
来源：
PROCEEDINGS OF THE NINTH INTERNATIONAL CONFERENCE ON HIGH TEMPERATURE MATERIALS CHEMISTRY | 1997年 / 97卷 / 39期
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中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
When silicon carbide crystals are decomposed thermally at temperatures of 2000 to 3000 degrees C, all of the silicon and part of the carbon are lost by evaporation, and yet the carbon residue retains the size and shape of the original crystals. Some thoughts are presented regarding the transport process leading to this strange pseudomorphosis.
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页码：523 / 528
页数：6
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