Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

被引：11

作者：

Naik, H. ^{[1
]}

Tang, K. ^{[1
]}

Marron, T. ^{[1
]}

Chow, T. P. ^{[1
]}

Fronheiser, J. ^{[2
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY USA

[2] GE Global Res Ctr, Semicond Technol Lab, Niskayuna, NY USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

4H-SiC MOSFETs; (000-1) SiC substrate; (11-20) SiC substrate; inversion layer mobility; INVERSION CHANNEL MOBILITY; SILICON-CARBIDE; FACE;

D O I：

10.4028/www.scientific.net/MSF.615-617.785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of samples with (0001) (000-1) and (11-20) oriented SiC substrates were used to fabricate the MOSFETs, with a gate oxide process consisting of a low-temperature deposited oxide followed by NO anneal at 1175 degrees C for 2hrs. Various device parameters, particularly threshold voltage, subthreshold slope. field-effect mobility. inversion sheet carrier concentration and Hall mobility have been extracted. Temperature characterization up to 225 degrees C was also performed.

引用

页码：785 / 788

页数：4

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