High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient

被引：11
|
作者：
Kanzaki, Y [1 ]
Kinbara, H [1 ]
Kosugi, H [1 ]
Suda, J [1 ]
Kimoto, T [1 ]
Matsunami, H [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷
关键词：
MOS; MOSFET; channel mobility; N2O oxidation; (11-20); short-channel effect;
D O I：
10.4028/www.scientific.net/MSF.457-460.1429
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Planar n-channel MOSFETs have been fabricated on 4H-SiC (11-20), (0001) and (000-1) faces by using oxidation in N2O ambient. The relationship between the MOSFET performance and the acceptor concentration (7x10(15)-2x10(17)cm(-3)) of epilayers has been investigated. 4H-SiC (11-20) MOSFETs have shown a high effective channel mobility of 70 cm(2)/Vs at a 2x10(16) cm(-3) doping, and 54 cm(2)/Vs at 2x10(17) cm(-3). Short-channel effects have been also investigated.
引用
收藏
页码：1429 / 1432
页数：4
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