A Study on the Evaluation Method of Glass Frit Paste for Crystalline Silicon Solar Cells

被引：0

作者：

Aoki, Mari ^{[1
]}

Aoyama, Takayuki ^{[2
,3
]}

Sumita, Isao ^{[1
]}

Yoshino, Yasushi ^{[2
]}

Ogura, Atsushi ^{[3
]}

Ohshita, Yoshio ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

[2] Noritake Co Ltd, 300 Higashiyama,Miyoshi Cho, Miyoshi, Aichi 4700293, Japan

[3] Meiji Univ, Tama Ku, 1-1-1 Higashi Mita, Kawasaki, Kanagawa 2148571, Japan

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

screen print; paste; glass frit; floating contact; recombination; c-si; n-type; EXPLANATION;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Conductive paste degrades the solar cell performance due to the metallization. Silver crystallites at the interface may shunt the p-n junction, which degrades the cell performance. Besides, it is conceivable that glass frit itself should not effectively damage silicon, but there is no clear evidence for the proof. In this study, the "floating contact method" proposed by R. Hoenig is used to evaluate the effects of glass frit by making the floating contacts with the glass frit. It is conclude that glass frit itself causes shunts and increases the saturation current, which corresponds carrier recombination beneath the glass frit contacts.

引用

页码：2850 / 2853

页数：4

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