Study of -ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C-V and DLTS

被引：6

作者：

Cao, Shu-rui ^{[1
,3
,4
]}

Ke, Xiao-yu ^{[1
]}

Ming, Si-ting ^{[1
]}

Wang, Duo-wei ^{[1
]}

Li, Tong ^{[1
]}

Liu, Bing-yan ^{[1
]}

Ma, Yao ^{[1
,2
]}

Li, Yun ^{[1
,2
]}

Yang, Zhi-mei ^{[1
,2
]}

Gong, Min ^{[1
,2
]}

Huang, Ming-min ^{[1
,2
]}

Bi, Jin-shun ^{[3
,4
]}

Xu, Yan-nan ^{[3
,4
]}

Xi, Kai ^{[3
,4
]}

Xu, Gao-bo ^{[3
,4
]}

Majumdar, Sandip ^{[5
]}

机构：

[1] Sichuan Univ, Coll Phys Sci & Technol, Key Lab Microelect Sichuan Prov, Chengdu 610064, Sichuan, Peoples R China

[2] Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Sichuan, Peoples R China

[3] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[4] Univ Chinese Acad Sci, Beijing 100029, Peoples R China

[5] ICFAI Univ, Dept Sci & Technol, Agartala, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 12期

基金：

中国国家自然科学基金;

关键词：

LEVEL TRANSIENT SPECTROSCOPY; SI; IRRADIATION; DEVICE; TRAPS;

D O I：

10.1007/s10854-019-01450-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gamma-ray radiation effects on the SiO2/HfO2/Al2O3/HfO2/Al2O3 based charge trapping memory have been investigated. Capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were applied to study the change in electrical properties from total dose radiation. C-V results showed a negative shift of flat-band voltage while dc memory window degraded after gamma-ray radiation. For DLTS result, two original peaks were found degraded while two new peaks appeared after radiation. Both C-V and DLTS results show that Gamma ray leads to the degradation of trapping effect.

引用

页码：11079 / 11085

页数：7

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