Total Ionizing Dose Hardening of 45 nm FD-SOI MOSFETs Using Body-Tie Biasing

被引:5
|
作者
Liu, Xiaoqiang [1 ]
Cai, Li [1 ]
Liu, Baojun [2 ]
Yang, Xiaokuo [1 ]
Cui, Huanqing [1 ]
Li, Cheng [1 ]
机构
[1] Air Force Engn Univ, Dept Fdn, Xian 710051, Shaanxi, Peoples R China
[2] Air Force Engn Univ, Air Tech Sergeant Sch, Xinyang 464000, Peoples R China
基金
中国国家自然科学基金;
关键词
Fully depleted silicon-on-insulator (FD-SOI); total ionizing dose (TID); floating-body; tied-body; body-tie biasing;
D O I
10.1109/ACCESS.2019.2910845
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
The total ionizing dose (TID) effect is a problematic concern in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor transistors (MOSFETs) because of the introduction of the thin buried oxide layer. The device performance is degraded by the radiation-induced trapped charges in the oxide, which cause threshold-voltage drifts and OFF-state leakage-current increments. This paper proposes a novel strategy for TID hardening in FD-SOI devices by using body-tie biasing. First, an n-type three-dimensional FD-SOI MOSFET with a gate length of 45 nm is built, and the irradiation-induced charge trapping in the oxide structures is simulated under different bias conditions. The responses of the floating-body FD-SOI devices and the devices with an additional body-tie, to the total dose and interface charges, are simulated and compared. The results show that the tied-body structure is more tolerant to the TID effect than the floating-body structure and that it can endure up to 100 had of TID irradiation without body-tie biasing. To mitigate the degradation of the tied-body device at high dose levels, body-tie biasing is used, and the "repairing" voltage" at different dose levels is calculated. By applying the "repairing voltage" to the body-tie, the irradiated device can be restored to the pre-irradiation state efficiently.
引用
收藏
页码:51276 / 51283
页数:8
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