Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology

he impact of body biasing on the low frequency noise (LFN) performances of MOS transistors from a 130nm CMOS technology was investigated. The body-to-source voltage V-BS was varied from -0.5V to +0.5V for reverse and forward mode substrate biasing. Detailed electrical characterisation was performed and the benefits of the body bias analysed in terms of current and maximum transconductance variations. Noise measurements were first performed at low drain bias V-DS = +/- 25 mV and V-BS = 0 V in order to discuss the noise origin in the devices. Results are in agreement with the carrier number fluctuation theory AN for NMOS and with the correlated carrier number mobility DeltaN-Deltamu model for PMOS. Bulk bias dependence of the LFN was investigated at V-DS = V-DD = +/-1.2 V. Significant noise reduction of about 50% in both N and PMOSFETS was observed in the weak inversion regime when applying a forward body bias. In strong inversion, the noise level was found to be approximately independent of the substrate bias V-BS. An explanation of the main noise results based on McWhorter's number fluctuation theory is proposed.