Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots

被引：0
|
作者：
Ribeiro, E [1 ]
Jäggi, R
Heinzel, T
Ensslin, K
Medeiros-Ribeiro, G
Petroff, PM
机构：
[1] UNICAMP, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
[2] ETH Zurich, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
BRAZILIAN JOURNAL OF PHYSICS | 1999年 / 29卷 / 04期
关键词：
D O I：
10.1590/S0103-97331999000400026
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the observation of a metal-insulator transition in zero magnetic field in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Pi below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's. We suggest that the disorder introduced by the quantum dots plays a crucial role.
引用
收藏
页码：742 / 745
页数：4
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