Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots

We report the observation of a metal-insulator transition in zero magnetic field in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Pi below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's. We suggest that the disorder introduced by the quantum dots plays a crucial role.