Evidence for hole traps at the amorphous silicon/amorphous silicon-germanium heterostructure interface

被引：5

作者：

Palsule, C ^{[1
]}

Paschen, U ^{[1
]}

Cohen, JD ^{[1
]}

Yang, J ^{[1
]}

Guha, S ^{[1
]}

机构：

[1] UNITED SOLAR SYST CORP,TROY,MI 48084

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.118192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Voltage-pulse stimulated capacitance transient measurements on a series a-Si:H/a-Si, Ge:H devices disclose a large density of hole traps at or very close to the heterojunction interface. The transient signal magnitude is independent of temperature or applied bias, ruling out charge polarization effects or a defect creation process caused by the filling pulse. While the areal density of such hole traps is considerable (within a factor of 2 of 10(11) cm(-2) for all samples) these traps do not appear to behave as recombination centers. Also, the treatment of the a-Si:H/a-Si,Ge:H interface during growth can significantly alter the concentration of these traps. (C) 1997 American Institute of Physics.

引用

页码：499 / 501

页数：3

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