Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

被引：9
|
作者：
Kim, Kwangeun [1 ]
Jeon, Youngin [1 ]
Cho, Kyoungah [1 ]
Kim, Sangsig [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
来源：
ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
piezophototronics; piezoelectronics; ZnO; nanowire; trap-assisted electroluminescence; finite difference time domain; finite element method; PIEZO-PHOTOTRONICS; ZNO; PIEZOTRONICS; DEVICES; PHOTODETECTOR; PERFORMANCE; FABRICATION; EMISSION; ARRAY;
D O I：
10.1021/acsami.5b11053
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron hole pairs thereby enhancing the efficiency of the trap-assisted green EL.
引用
收藏
页码：2764 / 2773
页数：10
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