Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

被引：9
|
作者：
Kim, Kwangeun [1 ]
Jeon, Youngin [1 ]
Cho, Kyoungah [1 ]
Kim, Sangsig [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
来源：
ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
piezophototronics; piezoelectronics; ZnO; nanowire; trap-assisted electroluminescence; finite difference time domain; finite element method; PIEZO-PHOTOTRONICS; ZNO; PIEZOTRONICS; DEVICES; PHOTODETECTOR; PERFORMANCE; FABRICATION; EMISSION; ARRAY;
D O I：
10.1021/acsami.5b11053
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron hole pairs thereby enhancing the efficiency of the trap-assisted green EL.
引用
收藏
页码：2764 / 2773
页数：10
相关论文
共 50 条
  • [21] High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks
    Chiu, Ching-Hsueh
    Lin, Chien-Chung
    Han, Hau-Vei
    Liu, Che-Yu
    Chen, Yan-Hao
    Lan, Yu-Pin
    Yu, Peichen
    Kuo, Hao-Chung
    Lu, Tien-Chang
    Wang, Shing-Chung
    Chang, Chun-Yen
    NANOTECHNOLOGY, 2012, 23 (04)
  • [22] Effect of SiO2 Nanoextractor on Far-Field Radiation Pattern of Vertical Light-Emitting Diodes
    Son, Hyokun
    Lee, June Key
    Kim, Sang-Mook
    APPLIED PHYSICS EXPRESS, 2013, 6 (10)
  • [23] Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays
    Ee, Yik-Khoon
    Arif, Ronald A.
    Tansu, Nelson
    Kumnorkaew, Pisist
    Gilchrist, James F.
    APPLIED PHYSICS LETTERS, 2007, 91 (22)
  • [24] Ultraviolet Electroluminescence From n-ZnO-SiO2-ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias
    Wu, M. K.
    Shih, Y. T.
    Li, W. C.
    Chen, H. C.
    Chen, M. J.
    Kuan, H.
    Yang, J. R.
    Shiojiri, M.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (21-24) : 1772 - 1774
  • [25] Improvement of the Light Extraction Efficiency in n-ZnO:Ga/p-Si Heterojunction Light Emitting Diodes by a SiO2 Current-Blocking Layer
    Han, Won Suk
    Kim, Young Yi
    Kong, Bo Hyun
    Cho, Hyung Koun
    Moon, Jin Young
    Lee, Ho Seong
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (08) : 08HK031 - 08HK034
  • [26] Scattering Effect on Optical Performance of Quantum Dot White Light-Emitting Diodes Incorporating SiO2 Nanoparticles
    Li, Zong-Tao
    Li, Jie-Xin
    Li, Jia-Sheng
    Deng, Zi-Hao
    Deng, Yue-Hua
    Tang, Yong
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2020, 56 (03)
  • [27] Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes
    Lee, In-Hwan
    Cho, Han-Su
    Bae, K. B.
    Polyakov, A. Y.
    Smirnov, N. B.
    Zinovyev, R. A.
    Baek, J. H.
    Chung, Tae-Hoon
    Shchemerov, I. V.
    Kondratyev, E. S.
    Pearton, S. J.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (04)
  • [28] Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes
    Zhou, Shengjun
    Liu, Mengling
    Hu, Hongpo
    Gao, Yilin
    Liu, Xingtong
    OPTICS AND LASER TECHNOLOGY, 2017, 97 : 137 - 143
  • [29] Enhanced brightness and efficiency in organic light-emitting diodes using SiO2 as buffer layer and electron-blocking layer
    Liu, Deang
    Teng, Feng
    Xu, Zheng
    Yang, Shengyi
    Qian, Lei
    He, Qingfang
    Wang, Yongsheng
    Xu, Xurong
    JOURNAL OF LUMINESCENCE, 2007, 122 : 656 - 659
  • [30] Electroluminescence enhancement of (11(2)over-bar2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
    Bae, S. Y.
    Lee, D. S.
    Kong, B. H.
    Cho, H. K.
    Kaeding, J. F.
    Nakamura, S.
    DenBaars, S. P.
    Speck, J. S.
    CURRENT APPLIED PHYSICS, 2011, 11 (03) : 954 - 958
12345