Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

被引：9

作者：

Kim, Kwangeun ^{[1
]}

Jeon, Youngin ^{[1
]}

Cho, Kyoungah ^{[1
]}

Kim, Sangsig ^{[1
]}

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

piezophototronics; piezoelectronics; ZnO; nanowire; trap-assisted electroluminescence; finite difference time domain; finite element method; PIEZO-PHOTOTRONICS; ZNO; PIEZOTRONICS; DEVICES; PHOTODETECTOR; PERFORMANCE; FABRICATION; EMISSION; ARRAY;

D O I：

10.1021/acsami.5b11053

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron hole pairs thereby enhancing the efficiency of the trap-assisted green EL.

引用

页码：2764 / 2773

页数：10

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